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FB20R06YE3B1BOMA1 Infineon Technologies

INFNS12008-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 77 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 27 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details FB20R06YE3B1BOMA1 Infineon Technologies

Description: IGBT MODULE, Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 77 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 27 A, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.