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| 10+ | 43.57 EUR |
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Technische Details FB30R06W1E3 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W, Type of semiconductor module: IGBT, Power dissipation: 115W, Technology: EasyPIM™ 1B, Mechanical mounting: screw, Pulsed collector current: 60A, Max. off-state voltage: 0.6kV, Electrical mounting: Press-in PCB, Semiconductor structure: diode/transistor, Case: AG-EASY1B-1, Gate-emitter voltage: ±20V, Collector current: 30A, Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge.
Weitere Produktangebote FB30R06W1E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
FB30R06W1E3BOMA1 | INFINEON TECHNOLOGIES |
 Category: IGBT modulesDescription: Module: IGBT; diode/transistor; single-phase diode bridge; 115W Type of semiconductor module: IGBT Power dissipation: 115W Technology: EasyPIM™ 1B Mechanical mounting: screw Pulsed collector current: 60A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor Case: AG-EASY1B-1 Gate-emitter voltage: ±20V Collector current: 30A Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FB30R06W1E3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Type of semiconductor module: IGBT
Power dissipation: 115W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; single-phase diode bridge; 115W
Type of semiconductor module: IGBT
Power dissipation: 115W
Technology: EasyPIM™ 1B
Mechanical mounting: screw
Pulsed collector current: 60A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: AG-EASY1B-1
Gate-emitter voltage: ±20V
Collector current: 30A
Topology: IGBT three-phase bridge; NTC thermistor; single-phase diode bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH