FBG10N30BSH EPC Space, LLC

Description: GAN FET HEMT 100V 30A 4FSMD-B, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: 4-SMD, Vgs(th) (Max) @ Id: 2.5V @ 5mA, Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 5V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: GaN HEMT, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead, Current - Test: 30 A, Voltage - Test: 50 V, Voltage - Rated: 100 V, Configuration: N-Channel, Packaging: Bulk.