FBG20N04ASH EPC Space, LLC

Description: GAN FET HEMT 200V 4A 4FSMD-A, Configuration: N-Channel, Current - Test: 4 A, Voltage - Test: 100 V, Voltage - Rated: 200 V, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: 4-SMD, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Rds On (Max) @ Id, Vgs: 130mOhm @ 4A, 5V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: GaN HEMT, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-SMD, No Lead.