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FC06004B

FC06004B fastSiC

Datasheet_FC06004B.pdf
Hersteller: fastSiC
Description: DIODE SIL CARB 650V 4A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: 8-PQFN (5x6)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 520 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
18+1.02 EUR
100+0.46 EUR
4000+0.41 EUR
Mindestbestellmenge: 15
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Technische Details FC06004B fastSiC

Description: DIODE SIL CARB 650V 4A PQFN5x6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 10pF @ 400V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: 8-PQFN (5x6), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A, Current - Reverse Leakage @ Vr: 1 µA @ 520 V, Qualification: AEC-Q101.