FCA100AC120 SanRex
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1370.13 EUR |
| 5+ | 1322.95 EUR |
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Technische Details FCA100AC120 SanRex
Description: 1200V 7.4M SIC MOSFET, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 625W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 17200pF @ 20V, Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 5V @ 3mA, Part Status: Active.
Weitere Produktangebote FCA100AC120
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FCA100AC120 | SanRex Corporation |
 Description: 1200V 7.4M SIC MOSFETPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 625W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 17200pF @ 20V Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 5V @ 3mA Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FCA100AC120 |
|
Hersteller: SanRex Corporation
Description: 1200V 7.4M SIC MOSFET
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 625W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 17200pF @ 20V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 5V @ 3mA
Part Status: Active
Description: 1200V 7.4M SIC MOSFET
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 625W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 17200pF @ 20V
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 5V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH