
auf Bestellung 361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 10.16 EUR |
10+ | 8.52 EUR |
25+ | 6.41 EUR |
100+ | 5.37 EUR |
250+ | 5.32 EUR |
450+ | 5.28 EUR |
900+ | 5.24 EUR |
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Technische Details FCA20N60 onsemi / Fairchild
Description: MOSFET N-CH 600V 20A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCA20N60 nach Preis ab 5.21 EUR bis 10.81 EUR
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FCA20N60 | Hersteller : onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 442 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA20N60 | Hersteller : FAIRCHILD |
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auf Bestellung 5850 Stücke: Lieferzeit 21-28 Tag (e) |
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FCA20N60 | Hersteller : FAIRCHILD |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FCA20N60 | Hersteller : ON Semiconductor |
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auf Bestellung 13470 Stücke: Lieferzeit 21-28 Tag (e) |
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FCA20N60 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCA20N60 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCA20N60 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCA20N60 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A |
Produkt ist nicht verfügbar |