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FCB070N65S3
FCB070N65S3
FCB070N65S3FCB070N65S3

FCB070N65S3 ONSEMI

fcb070n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 70mΩ
Gate-source voltage: ±30V
Drain current: 44A
Drain-source voltage: 650V
Power dissipation: 312W
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10+7.61 EUR
14+5.15 EUR
100+5.13 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCB070N65S3 ONSEMI

Description: MOSFET N-CH 650V 44A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V, Power Dissipation (Max): 312W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4.4mA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V.

Weitere Produktangebote FCB070N65S3 nach Preis ab 4.8 EUR bis 11.42 EUR

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FCB070N65S3 FCB070N65S3 onsemi fcb070n65s3-d.pdf Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+4.8 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCB070N65S3 FCB070N65S3 onsemi fcb070n65s3-d.pdf MOSFETs SuperFET3 650V 70mOhm
auf Bestellung 1072 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.35 EUR
10+7.73 EUR
100+5.88 EUR
500+5.81 EUR
800+5.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB070N65S3 FCB070N65S3 onsemi fcb070n65s3-d.pdf Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.42 EUR
10+7.74 EUR
100+5.87 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCB070N65S3 fcb070n65s3-d.pdf
FCB070N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+4.8 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCB070N65S3 fcb070n65s3-d.pdf
FCB070N65S3
Hersteller: onsemi
MOSFETs SuperFET3 650V 70mOhm
auf Bestellung 1072 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+11.35 EUR
10+7.73 EUR
100+5.88 EUR
500+5.81 EUR
800+5.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB070N65S3 fcb070n65s3-d.pdf
FCB070N65S3
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.42 EUR
10+7.74 EUR
100+5.87 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH