FCB11N60TM onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Description: MOSFET N-CH 600V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 631 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.93 EUR |
10+ | 6.66 EUR |
100+ | 5.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCB11N60TM onsemi
Description: ONSEMI - FCB11N60TM - Leistungs-MOSFET, n-Kanal, 600 V, 11 A, 0.32 ohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85423190, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 11A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 125W, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 125W, Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.32ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.32ohm, SVHC: No SVHC (15-Jan-2018).
Weitere Produktangebote FCB11N60TM nach Preis ab 4.29 EUR bis 7.98 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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FCB11N60TM | Hersteller : onsemi / Fairchild | MOSFET HIGH POWER |
auf Bestellung 2042 Stücke: Lieferzeit 14-28 Tag (e) |
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FCB11N60TM | Hersteller : ONSEMI |
Description: ONSEMI - FCB11N60TM - Leistungs-MOSFET, n-Kanal, 600 V, 11 A, 0.32 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85423190 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.32ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.32ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 286043 Stücke: Lieferzeit 14-21 Tag (e) |
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FCB11N60TM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FCB11N60TM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FCB11N60TM | Hersteller : ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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FCB11N60TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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FCB11N60TM | Hersteller : onsemi |
Description: MOSFET N-CH 600V 11A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V |
Produkt ist nicht verfügbar |
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FCB11N60TM | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |