FCB20N60FTM ONSEMI
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.28 EUR |
| 14+ | 6.46 EUR |
| 16+ | 5.41 EUR |
| 25+ | 4.68 EUR |
| 50+ | 4.24 EUR |
| 100+ | 3.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCB20N60FTM ONSEMI
Description: MOSFET N-CH 600V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCB20N60FTM nach Preis ab 3.76 EUR bis 13.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FCB20N60FTM | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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FCB20N60FTM | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
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FCB20N60FTM | onsemi |
MOSFETs 600V NCH FRFET |
auf Bestellung 8978 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB20N60FTM | onsemi |
Description: MOSFET N-CH 600V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCB20N60FTM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.84 EUR |
| 26+ | 6.33 EUR |
| 100+ | 4.83 EUR |
| 250+ | 3.76 EUR |
| FCB20N60FTM |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.84 EUR |
| 26+ | 6.58 EUR |
| 100+ | 5.09 EUR |
| 250+ | 4.07 EUR |
| FCB20N60FTM |
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Hersteller: onsemi
MOSFETs 600V NCH FRFET
MOSFETs 600V NCH FRFET
auf Bestellung 8978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.11 EUR |
| 10+ | 7.02 EUR |
| 100+ | 6.43 EUR |
| FCB20N60FTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.34 EUR |
| 10+ | 8.98 EUR |
| 50+ | 7.13 EUR |