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FCB290N80 onsemi


fcb290n80-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.38 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCB290N80 onsemi

Description: MOSFET N-CH 800V 17A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Power Dissipation (Max): 212W (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote FCB290N80 nach Preis ab 5.65 EUR bis 10.58 EUR

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FCB290N80 FCB290N80 onsemi fcb290n80-d.pdf Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.44 EUR
10+7.4 EUR
100+5.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCB290N80 FCB290N80 onsemi / Fairchild FCB290N80_D-2311856.pdf MOSFET N-Channel SuperFET II MOSFET
auf Bestellung 672 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.58 EUR
10+8.87 EUR
25+8.38 EUR
100+7.18 EUR
250+6.78 EUR
500+6.39 EUR
800+5.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCB290N80 fcb290n80-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.44 EUR
10+7.4 EUR
100+5.65 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCB290N80 FCB290N80_D-2311856.pdf
Hersteller: onsemi / Fairchild
MOSFET N-Channel SuperFET II MOSFET
auf Bestellung 672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.58 EUR
10+8.87 EUR
25+8.38 EUR
100+7.18 EUR
250+6.78 EUR
500+6.39 EUR
800+5.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH