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FCD1300N80Z

FCD1300N80Z onsemi / Fairchild

FCD1300N80Z-D.pdf Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 10420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.36 EUR
10+2.57 EUR
100+1.87 EUR
500+1.54 EUR
1000+1.41 EUR
2500+1.31 EUR
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Technische Details FCD1300N80Z onsemi / Fairchild

Description: MOSFET N-CH 800V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V.

Weitere Produktangebote FCD1300N80Z nach Preis ab 1.54 EUR bis 3.41 EUR

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FCD1300N80Z FCD1300N80Z Hersteller : onsemi fcd1300n80z-d.pdf Description: MOSFET N-CH 800V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
auf Bestellung 1911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.62 EUR
100+1.88 EUR
500+1.54 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FCD1300N80Z FCD1300N80Z Hersteller : ON Semiconductor fcd1300n80z.pdf Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
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FCD1300N80Z FCD1300N80Z Hersteller : ON Semiconductor fcd1300n80z.pdf Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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FCD1300N80Z FCD1300N80Z Hersteller : onsemi fcd1300n80z-d.pdf Description: MOSFET N-CH 800V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V
Produkt ist nicht verfügbar
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FCD1300N80Z Hersteller : ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 16.2nC
On-state resistance: 1.3Ω
Drain current: 4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Power dissipation: 52W
Drain-source voltage: 800V
Kind of package: reel; tape
Case: DPAK
Produkt ist nicht verfügbar
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