auf Bestellung 10420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.36 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.41 EUR |
| 2500+ | 1.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCD1300N80Z onsemi / Fairchild
Description: MOSFET N-CH 800V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V.
Weitere Produktangebote FCD1300N80Z nach Preis ab 1.53 EUR bis 3.4 EUR
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FCD1300N80Z | Hersteller : onsemi |
 Description: MOSFET N-CH 800V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
auf Bestellung 1911 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD1300N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R |
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FCD1300N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R |
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| FCD1300N80Z | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Mounting: SMD Polarisation: unipolar Gate charge: 16.2nC On-state resistance: 1.3Ω Drain current: 4A Pulsed drain current: 12A Gate-source voltage: ±20V Power dissipation: 52W Drain-source voltage: 800V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FCD1300N80Z | Hersteller : onsemi |
Description: MOSFET N-CH 800V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 100 V |
Produkt ist nicht verfügbar |
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| FCD1300N80Z | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK Mounting: SMD Polarisation: unipolar Gate charge: 16.2nC On-state resistance: 1.3Ω Drain current: 4A Pulsed drain current: 12A Gate-source voltage: ±20V Power dissipation: 52W Drain-source voltage: 800V Kind of package: reel; tape Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |