FCD2250N80Z onsemi
Hersteller: onsemiDescription: MOSFET N-CH 800V 2.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.03 EUR |
| 5000+ | 0.98 EUR |
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Technische Details FCD2250N80Z onsemi
Description: MOSFET N-CH 800V 2.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc), Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 260µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V.
Weitere Produktangebote FCD2250N80Z nach Preis ab 0.77 EUR bis 3.54 EUR
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FCD2250N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2190 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD2250N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2190 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD2250N80Z | Hersteller : onsemi |
MOSFETs N-Channel SuperFET II MOSFET 800 V, 2.6 A, 2.25 O |
auf Bestellung 3122 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD2250N80Z | Hersteller : onsemi |
Description: MOSFET N-CH 800V 2.6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 260µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V |
auf Bestellung 9463 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD2250N80Z | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 800V 2.6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FCD2250N80Z | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 6.5A; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 6.5A Power dissipation: 39W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.25Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |