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FCD260N65S3

FCD260N65S3 onsemi

fcd260n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.26 EUR
100+ 3.51 EUR
500+ 2.97 EUR
1000+ 2.52 EUR
Mindestbestellmenge: 5
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Technische Details FCD260N65S3 onsemi

Description: MOSFET N-CH 650V 12A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Supplier Device Package: TO-252AA, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V.

Weitere Produktangebote FCD260N65S3 nach Preis ab 2.76 EUR bis 5.02 EUR

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FCD260N65S3 FCD260N65S3 Hersteller : onsemi FCD260N65S3_D-2311674.pdf MOSFET SUPERFET3 260MOHM TO252
auf Bestellung 2460 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+5.02 EUR
12+ 4.45 EUR
100+ 3.93 EUR
250+ 3.9 EUR
500+ 3.56 EUR
1000+ 3.07 EUR
2500+ 2.76 EUR
Mindestbestellmenge: 11
FCD260N65S3 FCD260N65S3 Hersteller : ON Semiconductor fcd260n65s3-d.pdf Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
FCD260N65S3 Hersteller : ON Semiconductor fcd260n65s3-d.pdf
auf Bestellung 2300 Stücke:
Lieferzeit 21-28 Tag (e)
FCD260N65S3 FCD260N65S3 Hersteller : onsemi fcd260n65s3-d.pdf Description: MOSFET N-CH 650V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
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