| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.13 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.74 EUR |
| 2500+ | 1.59 EUR |
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Technische Details FCD600N65S3R0 onsemi
Description: MOSFET N-CH 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 600µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V.
Weitere Produktangebote FCD600N65S3R0 nach Preis ab 1.84 EUR bis 5.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCD600N65S3R0 | onsemi |
 Description: MOSFET N-CH 650V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V |
auf Bestellung 2914 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FCD600N65S3R0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
Description: MOSFET N-CH 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
auf Bestellung 2914 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.34 EUR |
| 50+ | 2.55 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.84 EUR |