FCD600N65S3R0 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.15 EUR |
| 5000+ | 1.13 EUR |
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Technische Details FCD600N65S3R0 onsemi
Description: MOSFET N-CH 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 600µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V.
Weitere Produktangebote FCD600N65S3R0 nach Preis ab 1.2 EUR bis 3.75 EUR
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FCD600N65S3R0 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 600µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 400 V |
auf Bestellung 6879 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD600N65S3R0 | Hersteller : onsemi |
MOSFETs SUPERFET3 650V 10A 360 mOhm |
auf Bestellung 6958 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD600N65S3R0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R |
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FCD600N65S3R0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R |
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FCD600N65S3R0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R |
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| FCD600N65S3R0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| FCD600N65S3R0 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |