FCD7N60TM-WS ON Semiconductor
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 1.48 EUR |
| 105+ | 1.31 EUR |
| 106+ | 1.25 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.07 EUR |
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Technische Details FCD7N60TM-WS ON Semiconductor
Description: MOSFET N-CH 600V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V.
Weitere Produktangebote FCD7N60TM-WS nach Preis ab 1.07 EUR bis 3.19 EUR
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD7N60TM-WS | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
auf Bestellung 1247 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM-WS | Hersteller : onsemi / Fairchild |
MOSFETs Trans N-Ch 600V 7A 3-Pin 2+Tab |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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FCD7N60TM-WS | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| FCD7N60TM-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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FCD7N60TM-WS | Hersteller : onsemi |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FCD7N60TM-WS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 21A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |