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FCD850N80Z

FCD850N80Z onsemi

fcu850n80z-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.74 EUR
Mindestbestellmenge: 2500
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Technische Details FCD850N80Z onsemi

Description: MOSFET N-CH 800V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 600µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V.

Weitere Produktangebote FCD850N80Z nach Preis ab 2.29 EUR bis 5.8 EUR

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FCD850N80Z FCD850N80Z Hersteller : onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 20910 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.87 EUR
100+ 3.19 EUR
500+ 2.7 EUR
1000+ 2.29 EUR
Mindestbestellmenge: 5
FCD850N80Z FCD850N80Z Hersteller : onsemi / Fairchild FCU850N80Z_D-2311892.pdf MOSFET N-Channel SuperFET II MOSFET
auf Bestellung 10731 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+5.8 EUR
11+ 4.81 EUR
100+ 3.85 EUR
250+ 3.54 EUR
500+ 3.22 EUR
1000+ 2.81 EUR
Mindestbestellmenge: 9
FCD850N80Z Hersteller : ON Semiconductor fcu850n80z-d.pdf
auf Bestellung 2380 Stücke:
Lieferzeit 21-28 Tag (e)