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FCD900N60Z

FCD900N60Z onsemi

fcd900n60z-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.14 EUR
5000+1.13 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCD900N60Z onsemi

Description: MOSFET N-CH 600V 4.5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V.

Weitere Produktangebote FCD900N60Z nach Preis ab 1.13 EUR bis 3.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCD900N60Z FCD900N60Z Hersteller : Fairchild Semiconductor FAIR-S-A0001339544-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 4
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
385+1.31 EUR
Mindestbestellmenge: 385
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z FCD900N60Z Hersteller : onsemi / Fairchild FCD900N60Z_D-2312011.pdf MOSFETs 600V N-Channel MOSFET
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.83 EUR
100+1.63 EUR
250+1.62 EUR
500+1.42 EUR
1000+1.25 EUR
2500+1.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z FCD900N60Z Hersteller : onsemi fcd900n60z-d.pdf Description: MOSFET N-CH 600V 4.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
auf Bestellung 14297 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.26 EUR
10+2.21 EUR
100+1.56 EUR
500+1.33 EUR
1000+1.22 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z Hersteller : ONSEMI fcd900n60z-d.pdf FAIR-S-A0001339544-1.pdf?t.download=true&u=5oefqw FCD900N60Z SMD N channel transistors
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
58+1.24 EUR
61+1.17 EUR
300+1.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z Hersteller : ONSEMI FAIR-S-A0001339544-1.pdf?t.download=true&u=5oefqw Description: ONSEMI - FCD900N60Z - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (23-Jan-2024)
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z FCD900N60Z Hersteller : ON Semiconductor fcd900n60z-d.pdf Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCD900N60Z FCD900N60Z Hersteller : ON Semiconductor fcd900n60z-d.pdf Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH