FCD900N60Z onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details FCD900N60Z onsemi
Description: MOSFET N-CH 600V 4.5A TO252, Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote FCD900N60Z nach Preis ab 1.26 EUR bis 4.33 EUR
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FCD900N60Z | onsemi / Fairchild |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 2200 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD900N60Z | onsemi |
MOSFETs 600V N-Channel MOSFET |
auf Bestellung 2962 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 11542 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCD900N60Z | ONSEMI |
Description: ONSEMI - FCD900N60Z - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) |
auf Bestellung 1213 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1213 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FCD900N60Z |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 2200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.4 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.93 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.49 EUR |
| 2500+ | 1.37 EUR |
| FCD900N60Z |
![]() |
Hersteller: onsemi
MOSFETs 600V N-Channel MOSFET
MOSFETs 600V N-Channel MOSFET
auf Bestellung 2962 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.92 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.46 EUR |
| 2500+ | 1.29 EUR |
| 5000+ | 1.26 EUR |
| FCD900N60Z |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 11542 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.33 EUR |
| 10+ | 2.78 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.5 EUR |
| FCD900N60Z |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - FCD900N60Z - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (23-Jan-2024)
Description: ONSEMI - FCD900N60Z - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (23-Jan-2024)
auf Bestellung 1213 Stücke:
Lieferzeit 14-21 Tag (e)

