Technische Details FCH099N65S3-F155 onsemi / Fairchild
Description: MOSFET N-CH 650V 30A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 3mA, Power Dissipation (Max): 227W (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote FCH099N65S3-F155 nach Preis ab 6.6 EUR bis 9.47 EUR
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FCH099N65S3-F155 | onsemi |
 Description: MOSFET N-CH 650V 30A TO247-3Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.5V @ 3mA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 1089 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCH099N65S3-F155 | ON Semiconductor |
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auf Bestellung 695 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCH099N65S3-F155 |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 650V 30A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.47 EUR |
| 30+ | 7 EUR |
| 120+ | 6.97 EUR |
| 510+ | 6.6 EUR |
| FCH099N65S3-F155 |
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Hersteller: ON Semiconductor
auf Bestellung 695 Stücke:
Lieferzeit 21-28 Tag (e)