auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.88 EUR |
10+ | 9.15 EUR |
25+ | 7.78 EUR |
100+ | 7.37 EUR |
250+ | 7.11 EUR |
450+ | 6.04 EUR |
Produktrezensionen
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Technische Details FCH125N65S3R0-F155 onsemi
Description: MOSFET N-CH 650V 24A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.4mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V.
Weitere Produktangebote FCH125N65S3R0-F155 nach Preis ab 5.35 EUR bis 11 EUR
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FCH125N65S3R0-F155 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 24A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V |
auf Bestellung 2700 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH125N65S3R0-F155 | Hersteller : ON Semiconductor |
auf Bestellung 215 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH125N65S3R0-F155 | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCH125N65S3R0-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH125N65S3R0-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |