
FCH125N65S3R0-F155 onsemi

Description: MOSFET N-CH 650V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 10.51 EUR |
30+ | 7.67 EUR |
120+ | 6.85 EUR |
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Technische Details FCH125N65S3R0-F155 onsemi
Description: MOSFET N-CH 650V 24A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.4mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V.
Weitere Produktangebote FCH125N65S3R0-F155 nach Preis ab 5.49 EUR bis 10.54 EUR
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FCH125N65S3R0-F155 | Hersteller : onsemi |
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auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH125N65S3R0-F155 | Hersteller : ON Semiconductor |
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auf Bestellung 215 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH125N65S3R0-F155 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCH125N65S3R0-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Power dissipation: 181W Polarisation: unipolar Kind of package: tube Gate charge: 46nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Mounting: THT Case: TO247 Drain-source voltage: 650V Drain current: 15A On-state resistance: 0.105Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH125N65S3R0-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Power dissipation: 181W Polarisation: unipolar Kind of package: tube Gate charge: 46nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Mounting: THT Case: TO247 Drain-source voltage: 650V Drain current: 15A On-state resistance: 0.105Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |