auf Bestellung 414 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.43 EUR |
| 10+ | 6.74 EUR |
| 120+ | 4.51 EUR |
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Technische Details FCH165N65S3R0-F155 onsemi
Description: MOSFET N-CH 650V 19A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote FCH165N65S3R0-F155 nach Preis ab 4.28 EUR bis 9.52 EUR
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FCH165N65S3R0-F155 | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 19A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 4364 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCH165N65S3R0-F155 | Hersteller : ONSEMI |
Description: ONSEMI - FCH165N65S3R0-F155 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH165N65S3R0-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH165N65S3R0-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 47.5A Gate-source voltage: ±30V Gate charge: 39nC Drain current: 12.3A Power dissipation: 154W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCH165N65S3R0-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 0.14Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 47.5A Gate-source voltage: ±30V Gate charge: 39nC Drain current: 12.3A Power dissipation: 154W |
Produkt ist nicht verfügbar |