FCH190N65F-F155 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 20.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V
auf Bestellung 383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.06 EUR |
| 10+ | 6.33 EUR |
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Technische Details FCH190N65F-F155 onsemi
Description: MOSFET N-CH 650V 20.6A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 100 V.
Weitere Produktangebote FCH190N65F-F155 nach Preis ab 4.7 EUR bis 9.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FCH190N65F-F155 | Hersteller : onsemi / Fairchild |
MOSFETs SprFET2 650V 190mohm FRFET TO247 longlea |
auf Bestellung 6021 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCH190N65F-F155 | Hersteller : ON Semiconductor |
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auf Bestellung 8100 Stücke: Lieferzeit 21-28 Tag (e) |
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FCH190N65F-F155 Produktcode: 191730
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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FCH190N65F-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH190N65F-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH190N65F-F155 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH190N65F-F155 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |