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FCMT125N65S3

FCMT125N65S3 onsemi

fcmt125n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.82 EUR
100+ 8.34 EUR
500+ 7.41 EUR
1000+ 6.35 EUR
Mindestbestellmenge: 2
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Technische Details FCMT125N65S3 onsemi

Description: MOSFET N-CH 650V 24A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 590µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V.

Weitere Produktangebote FCMT125N65S3 nach Preis ab 6.99 EUR bis 9.85 EUR

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Preis ohne MwSt
FCMT125N65S3 FCMT125N65S3 Hersteller : onsemi FCMT125N65S3_D-2312043.pdf MOSFET SF3 650V 125MOHM MO SFET
auf Bestellung 2942 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.85 EUR
10+ 8.71 EUR
25+ 8.68 EUR
100+ 7.54 EUR
250+ 7.51 EUR
500+ 6.99 EUR
Mindestbestellmenge: 6
FCMT125N65S3 FCMT125N65S3 Hersteller : onsemi fcmt125n65s3-d.pdf Description: MOSFET N-CH 650V 24A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 590µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
FCMT125N65S3 Hersteller : ONSEMI FCMT125N65S3-D.PDF Description: ONSEMI - FCMT125N65S3 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 42693 Stücke:
Lieferzeit 14-21 Tag (e)
FCMT125N65S3 FCMT125N65S3 Hersteller : ON Semiconductor fcmt125n65s3-d.pdf Trans MOSFET N-CH 650V 24A 4-Pin PQFN EP T/R
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