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FCMT199N60

FCMT199N60 onsemi

fcmt199n60-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.64 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FCMT199N60 onsemi

Description: MOSFET N-CH 600V 20.2A POWER88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: Power88, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V.

Weitere Produktangebote FCMT199N60 nach Preis ab 3.8 EUR bis 8.87 EUR

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FCMT199N60 FCMT199N60 Hersteller : onsemi fcmt199n60-d.pdf Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 8030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.62 EUR
10+6.2 EUR
100+4.48 EUR
500+4.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCMT199N60 FCMT199N60 Hersteller : onsemi / Fairchild FCMT199N60-D.pdf MOSFETs 199mohm 600V SuperFET2
auf Bestellung 5873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.87 EUR
10+6.21 EUR
100+4.49 EUR
500+4.47 EUR
1000+4.44 EUR
3000+3.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCMT199N60 FCMT199N60 Hersteller : ON Semiconductor fcmt199n60.pdf Trans MOSFET N-CH 600V 20.2A 5-Pin Power 88 EP T/R
Produkt ist nicht verfügbar
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FCMT199N60 Hersteller : ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH