FCMT199N60 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 3.73 EUR |
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Technische Details FCMT199N60 onsemi
Description: MOSFET N-CH 600V 20.2A POWER88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: Power88, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V.
Weitere Produktangebote FCMT199N60 nach Preis ab 4.19 EUR bis 9.10 EUR
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FCMT199N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 20.2A POWER88 Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
auf Bestellung 15653 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT199N60 | Hersteller : onsemi / Fairchild |
MOSFETs 199mohm 600V SuperFET2 |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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FCMT199N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20.2A 5-Pin Power 88 EP T/R |
Produkt ist nicht verfügbar |
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| FCMT199N60 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| FCMT199N60 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC |
Produkt ist nicht verfügbar |