FCMT199N60 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
Produktrezensionen
Produktbewertung abgeben
Technische Details FCMT199N60 onsemi
Description: MOSFET N-CH 600V 20.2A POWER88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: Power88, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V.
Weitere Produktangebote FCMT199N60 nach Preis ab 3.8 EUR bis 10.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCMT199N60 | onsemi / Fairchild |
MOSFETs 199mohm 600V SuperFET2 |
auf Bestellung 5873 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FCMT199N60 | onsemi |
Description: MOSFET N-CH 600V 20.2A POWER88 Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: Power88 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V |
auf Bestellung 7103 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
FCMT199N60 | onsemi |
MOSFETs 199mohm 600V SuperFET2 |
auf Bestellung 2099 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| FCMT199N60 | ONN |
|
auf Bestellung 2710 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCMT199N60 |
|
Hersteller: onsemi / Fairchild
MOSFETs 199mohm 600V SuperFET2
MOSFETs 199mohm 600V SuperFET2
auf Bestellung 5873 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.87 EUR |
| 10+ | 6.21 EUR |
| 100+ | 4.49 EUR |
| 500+ | 4.47 EUR |
| 1000+ | 4.44 EUR |
| 3000+ | 3.8 EUR |
| FCMT199N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
Description: MOSFET N-CH 600V 20.2A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
auf Bestellung 7103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.12 EUR |
| 10+ | 6.11 EUR |
| 100+ | 4.41 EUR |
| 500+ | 4.38 EUR |
| FCMT199N60 |
|
Hersteller: onsemi
MOSFETs 199mohm 600V SuperFET2
MOSFETs 199mohm 600V SuperFET2
auf Bestellung 2099 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.33 EUR |
| 10+ | 6.86 EUR |
| 100+ | 5.56 EUR |
| 500+ | 4.95 EUR |
| 1000+ | 4.38 EUR |
| FCMT199N60 |
|
Hersteller: ONN
auf Bestellung 2710 Stücke:
Lieferzeit 21-28 Tag (e)