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FCMT299N60 onsemi


FCMT299N60-D.pdf
Hersteller: onsemi
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 217 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+10.01 EUR
10+6.66 EUR
100+4.77 EUR
500+4.27 EUR
1000+4.21 EUR
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Technische Details FCMT299N60 onsemi

Description: MOSFET N-CH 600V 12A POWER88, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: Power88, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V.

Weitere Produktangebote FCMT299N60 nach Preis ab 4.55 EUR bis 11.21 EUR

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FCMT299N60 FCMT299N60 onsemi FCMT299N60-D.pdf Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2386 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.21 EUR
10+7.46 EUR
50+5.85 EUR
100+5.34 EUR
500+4.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCMT299N60 ONSEMI FCMT299N60-D.pdf Description: ONSEMI - FCMT299N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 23026 Stücke:
Lieferzeit 14-21 Tag (e)
3000+4.77 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCMT299N60 FCMT299N60-D.pdf
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A POWER88
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: Power88
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1948 pF @ 380 V
auf Bestellung 2386 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.21 EUR
10+7.46 EUR
50+5.85 EUR
100+5.34 EUR
500+4.55 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCMT299N60 FCMT299N60-D.pdf
Hersteller: ONSEMI
Description: ONSEMI - FCMT299N60 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 23026 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+4.77 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH