auf Bestellung 2518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.21 EUR |
| 10+ | 4.12 EUR |
| 25+ | 3.91 EUR |
| 100+ | 3.38 EUR |
| 250+ | 3.36 EUR |
| 500+ | 3.24 EUR |
| 1000+ | 3.04 EUR |
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Technische Details FCMT360N65S3 onsemi
Description: MOSFET N-CH 650V 10A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote FCMT360N65S3 nach Preis ab 3.29 EUR bis 6.37 EUR
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FCMT360N65S3 | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 10A 4PQFNPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCMT360N65S3 | Hersteller : ONSEMI |
Description: ONSEMI - FCMT360N65S3 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 5410 Stücke: Lieferzeit 14-21 Tag (e) |
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FCMT360N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 10A 4-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FCMT360N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Mounting: SMD Case: PQFN4 Drain-source voltage: 650V Drain current: 10A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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FCMT360N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 10A 4PQFN Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: 4-PQFN (8x8) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400 |
Produkt ist nicht verfügbar |
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| FCMT360N65S3 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Mounting: SMD Case: PQFN4 Drain-source voltage: 650V Drain current: 10A On-state resistance: 0.36Ω Type of transistor: N-MOSFET Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 25A |
Produkt ist nicht verfügbar |