Produkte > ONSEMI > FCMT360N65S3
FCMT360N65S3

FCMT360N65S3 onsemi

fcmt360n65s3-d.pdf Hersteller: onsemi
MOSFETs Easy Drive 650V 10A 360 mOhm
auf Bestellung 2518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.04 EUR
10+4.35 EUR
100+4.01 EUR
250+3.94 EUR
500+3.54 EUR
1000+3.20 EUR
3000+3.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FCMT360N65S3 onsemi

Description: MOSFET N-CH 650V 10A 4PQFN, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.

Weitere Produktangebote FCMT360N65S3 nach Preis ab 3.29 EUR bis 6.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FCMT360N65S3 FCMT360N65S3 Hersteller : onsemi fcmt360n65s3-d.pdf Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
10+4.01 EUR
100+3.82 EUR
500+3.31 EUR
1000+3.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 Hersteller : ONSEMI FCMT360N65S3-D.PDF Description: ONSEMI - FCMT360N65S3 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 5410 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 FCMT360N65S3 Hersteller : ON Semiconductor fcmt360n65s3-d.pdf Trans MOSFET N-CH 650V 10A 4-Pin PQFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 Hersteller : ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 FCMT360N65S3 Hersteller : onsemi fcmt360n65s3-d.pdf Description: MOSFET N-CH 650V 10A 4PQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: 4-PQFN (8x8)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCMT360N65S3 Hersteller : ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Mounting: SMD
Power dissipation: 83W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Case: PQFN4
Pulsed drain current: 25A
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 0.36Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH