FCP099N60E ON Semiconductor
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 3.74 EUR |
| 41+ | 3.43 EUR |
| 50+ | 3.25 EUR |
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Technische Details FCP099N60E ON Semiconductor
Description: MOSFET N-CH 600V 37A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V.
Weitere Produktangebote FCP099N60E nach Preis ab 3.29 EUR bis 8.29 EUR
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FCP099N60E | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP099N60E | Hersteller : onsemi / Fairchild |
MOSFETs SuperFET2 600V Slow version |
auf Bestellung 566 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP099N60E | Hersteller : onsemi |
Description: MOSFET N-CH 600V 37A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3465 pF @ 380 V |
auf Bestellung 245 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP099N60E | Hersteller : ON Semiconductor |
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auf Bestellung 770 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP099N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP099N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP099N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCP099N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC |
Produkt ist nicht verfügbar |