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FCP125N65S3

FCP125N65S3 onsemi

fcp125n65s3-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+5.64 EUR
100+ 4.83 EUR
250+ 4.56 EUR
500+ 4.3 EUR
Mindestbestellmenge: 50
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Technische Details FCP125N65S3 onsemi

Description: MOSFET N-CH 650V 24A TO220-3, Packaging: Tape & Reel (TR), Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 181W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.4mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V.

Weitere Produktangebote FCP125N65S3 nach Preis ab 3.64 EUR bis 7.11 EUR

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Preis ohne MwSt
FCP125N65S3 FCP125N65S3 Hersteller : onsemi FCP125N65S3_D-2311643.pdf MOSFET SF3 650V 125MOHM E TO220
auf Bestellung 799 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.06 EUR
10+ 5.93 EUR
50+ 5.6 EUR
100+ 4.79 EUR
250+ 4.52 EUR
500+ 4.26 EUR
800+ 3.64 EUR
FCP125N65S3 FCP125N65S3 Hersteller : onsemi fcp125n65s3-d.pdf Description: MOSFET N-CH 650V 24A TO220-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.11 EUR
10+ 5.98 EUR
Mindestbestellmenge: 3
FCP125N65S3 FCP125N65S3 Hersteller : ON Semiconductor fcp125n65s3-d.pdf Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube
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