FCP150N65F onsemi / Fairchild
auf Bestellung 1364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.31 EUR |
| 10+ | 4.91 EUR |
| 100+ | 4.47 EUR |
| 500+ | 4.21 EUR |
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Technische Details FCP150N65F onsemi / Fairchild
Description: MOSFET N-CH 650V 24A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.4mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V.
Weitere Produktangebote FCP150N65F nach Preis ab 3.62 EUR bis 8.34 EUR
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FCP150N65F | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 24A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.4mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3737 pF @ 100 V |
auf Bestellung 2376 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP150N65F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube |
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| FCP150N65F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Gate charge: 72nC Kind of package: tube On-state resistance: 0.15Ω Drain current: 24A Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCP150N65F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 72A; 298W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 298W Case: TO220-3 Mounting: THT Gate charge: 72nC Kind of package: tube On-state resistance: 0.15Ω Drain current: 24A Gate-source voltage: ±20V Pulsed drain current: 72A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |