FCP165N65S3 ON Semiconductor
auf Bestellung 4039 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 159+ | 3.41 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.87 EUR |
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Technische Details FCP165N65S3 ON Semiconductor
Description: MOSFET N-CH 650V 19A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote FCP165N65S3 nach Preis ab 2.71 EUR bis 6.18 EUR
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FCP165N65S3 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 12687 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP165N65S3 | Hersteller : onsemi |
MOSFETs SUPERFET3 650V 19A 165 mOhm |
auf Bestellung 876 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N65S3 | Hersteller : onsemi |
Description: MOSFET N-CH 650V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 7200 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP165N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 677 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCP165N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP165N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP165N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP165N65S3 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 47.5A Gate-source voltage: ±20V Gate charge: 39nC Drain current: 19A Power dissipation: 154W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCP165N65S3 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO220-3 On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 47.5A Gate-source voltage: ±20V Gate charge: 39nC Drain current: 19A Power dissipation: 154W |
Produkt ist nicht verfügbar |