FCP165N65S3 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 159+ | 4.15 EUR |
| 500+ | 3.93 EUR |
| 1000+ | 3.63 EUR |
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Technische Details FCP165N65S3 ON Semiconductor
Description: MOSFET N-CH 650V 19A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote FCP165N65S3 nach Preis ab 3.45 EUR bis 10.31 EUR
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FCP165N65S3 | ON Semiconductor |
 Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 4039 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP165N65S3 | onsemi |
Description: MOSFET N-CH 650V 19A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V Power Dissipation (Max): 154W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.9mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
auf Bestellung 773 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP165N65S3 | onsemi |
MOSFETs SUPERFET3 650V 19A 165 mOhm |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP165N65S3 | ON Semiconductor |
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auf Bestellung 677 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP165N65S3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 19A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 4039 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 159+ | 4.15 EUR |
| 500+ | 3.93 EUR |
| 1000+ | 3.63 EUR |
| FCP165N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: MOSFET N-CH 650V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.82 EUR |
| 50+ | 4.57 EUR |
| 100+ | 4.16 EUR |
| 500+ | 3.45 EUR |
| FCP165N65S3 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V 19A 165 mOhm
MOSFETs SUPERFET3 650V 19A 165 mOhm
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.31 EUR |
| 10+ | 6.76 EUR |
| 100+ | 4.96 EUR |
| 500+ | 4.41 EUR |
| 1000+ | 3.92 EUR |
| FCP165N65S3 |
|
Hersteller: ON Semiconductor
auf Bestellung 677 Stücke:
Lieferzeit 21-28 Tag (e)