FCP190N60E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 600V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3+ | 7.6 EUR |
| 50+ | 3.95 EUR |
| 100+ | 3.6 EUR |
| 500+ | 2.98 EUR |
| 1000+ | 2.8 EUR |
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Technische Details FCP190N60E onsemi
Description: MOSFET N-CH 600V 20.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V.
Weitere Produktangebote FCP190N60E nach Preis ab 3.24 EUR bis 8.71 EUR
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FCP190N60E | Hersteller : onsemi |
MOSFETs 600V N-CHAN MOSFET |
auf Bestellung 1829 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP190N60E | Hersteller : ONN |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| FCP190N60E | Hersteller : On Semiconductor |
MOSFET N-CH 600V TO220-3 Група товару: Транзистори Од. вим: шт |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP190N60E Produktcode: 152423
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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FCP190N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP190N60E | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP190N60E | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 63nC Power dissipation: 208W Pulsed drain current: 61.8A |
Produkt ist nicht verfügbar |