FCP190N65F ON Semiconductor
| Anzahl | Preis |
|---|---|
| 800+ | 2.94 EUR |
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Technische Details FCP190N65F ON Semiconductor
Description: MOSFET N-CH 650V 20.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V.
Weitere Produktangebote FCP190N65F nach Preis ab 3.17 EUR bis 8.34 EUR
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FCP190N65F | ON Semiconductor |
 Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP190N65F | ON Semiconductor |
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 804 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP190N65F | onsemi |
MOSFETs N-Channel SuperFET II FRFET MOSFET |
auf Bestellung 2860 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP190N65F | onsemi |
Description: MOSFET N-CH 650V 20.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V |
auf Bestellung 33369 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP190N65F | ON Semiconductor |
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auf Bestellung 1530 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP190N65F |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 7200 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 3.67 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 3.17 EUR |
| FCP190N65F |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 804 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 3.67 EUR |
| 500+ | 3.44 EUR |
| FCP190N65F |
|
Hersteller: onsemi
MOSFETs N-Channel SuperFET II FRFET MOSFET
MOSFETs N-Channel SuperFET II FRFET MOSFET
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.13 EUR |
| 10+ | 4.44 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.68 EUR |
| FCP190N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
Description: MOSFET N-CH 650V 20.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V
auf Bestellung 33369 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.34 EUR |
| 50+ | 4.38 EUR |
| 100+ | 4 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 3.17 EUR |
| FCP190N65F |
|
Hersteller: ON Semiconductor
auf Bestellung 1530 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH