FCP190N65F ON Semiconductor
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 53+ | 2.76 EUR |
| 100+ | 2.54 EUR |
| 500+ | 2.27 EUR |
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Technische Details FCP190N65F ON Semiconductor
Description: MOSFET N-CH 650V 20.6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V.
Weitere Produktangebote FCP190N65F nach Preis ab 2.27 EUR bis 6.71 EUR
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FCP190N65F | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 758 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP190N65F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 20.6A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 2mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3225 pF @ 25 V |
auf Bestellung 1659 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP190N65F | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel SuperFET II FRFET MOSFET |
auf Bestellung 3444 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP190N65F | Hersteller : ON Semiconductor |
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auf Bestellung 1530 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP190N65F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 20.6A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP190N65F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| FCP190N65F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |