FCP190N65S3R0 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
| Anzahl | Preis |
|---|---|
| 5+ | 4.17 EUR |
| 50+ | 2.06 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.38 EUR |
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Technische Details FCP190N65S3R0 onsemi
Description: MOSFET N-CH 650V 17A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V, Power Dissipation (Max): 144W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.7mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V.
Weitere Produktangebote FCP190N65S3R0 nach Preis ab 1.44 EUR bis 4.56 EUR
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FCP190N65S3R0 | Hersteller : onsemi |
MOSFETs SUPERFET3 650V TO220 PKG |
auf Bestellung 516 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP190N65S3R0 | Hersteller : ON Semiconductor |
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auf Bestellung 333 Stücke: Lieferzeit 21-28 Tag (e) |