Technische Details FCP20N60 ON Semiconductor
Description: MOSFET N-CH 600V 20A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCP20N60 nach Preis ab 4.51 EUR bis 11.83 EUR
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FCP20N60 | ON Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3700 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3700 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | onsemi |
MOSFETs 600V N-Channel SuperFET |
auf Bestellung 1114 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | onsemi |
Description: MOSFET N-CH 600V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 1666 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP20N60 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 4.51 EUR |
| FCP20N60 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3700 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 4.72 EUR |
| FCP20N60 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 5.53 EUR |
| FCP20N60 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 7.71 EUR |
| FCP20N60 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.95 EUR |
| 13+ | 6.82 EUR |
| 17+ | 5.31 EUR |
| 50+ | 5.02 EUR |
| FCP20N60 |
|
Hersteller: onsemi
MOSFETs 600V N-Channel SuperFET
MOSFETs 600V N-Channel SuperFET
auf Bestellung 1114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.6 EUR |
| 10+ | 6.2 EUR |
| 100+ | 5.65 EUR |
| FCP20N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
auf Bestellung 1666 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.83 EUR |
| 50+ | 6.3 EUR |
| 100+ | 5.76 EUR |
| 500+ | 4.83 EUR |
| 1000+ | 4.72 EUR |
| FCP20N60 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)