FCP20N60 ON Semiconductor
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 3.63 EUR |
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Technische Details FCP20N60 ON Semiconductor
Description: MOSFET N-CH 600V 20A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V.
Weitere Produktangebote FCP20N60 nach Preis ab 3.40 EUR bis 9.59 EUR
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FCP20N60 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 256 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 102 Stücke: Lieferzeit 7-14 Tag (e) |
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FCP20N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO220AB Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP20N60 | Hersteller : onsemi / Fairchild |
MOSFETs 600V N-Channel SuperFET |
auf Bestellung 1387 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 20A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V |
auf Bestellung 9857 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP20N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCP20N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |