Weitere Produktangebote FCP22N60N nach Preis ab 4.47 EUR bis 9.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCP22N60N | Hersteller : onsemi / Fairchild |
 MOSFETs 600V N-Channel SupreMOS |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| FCP22N60N | Hersteller : ONS/FAI |
Mosfet N-ch 600V 22A TO-220 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||||||||||||||
 |
FCP22N60N | Hersteller : onsemi |
Description: MOSFET N-CH 600V 22A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±45V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FCP22N60N | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB Type of transistor: N-MOSFET Technology: SuperMOS® Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 205W Case: TO220AB Gate-source voltage: ±45V On-state resistance: 0.165Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |