Technische Details FCP360N65S3R0 ON Semiconductor
Description: MOSFET N-CH 650V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V.
Weitere Produktangebote FCP360N65S3R0 nach Preis ab 2.08 EUR bis 6.33 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCP360N65S3R0 | ON Semiconductor |
 Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 3800 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP360N65S3R0 | ON Semiconductor |
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1301 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP360N65S3R0 | onsemi |
MOSFETs SUPERFET3 650V TO220 PKG |
auf Bestellung 784 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP360N65S3R0 | onsemi |
Description: MOSFET N-CH 650V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP360N65S3R0 | ONSEMI |
Description: ONSEMI - FCP360N65S3R0 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 |
auf Bestellung 5138 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCP360N65S3R0 | ONN |
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auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP360N65S3R0 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 3800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 199+ | 3.28 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.62 EUR |
| FCP360N65S3R0 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 199+ | 3.28 EUR |
| 500+ | 2.92 EUR |
| 1000+ | 2.62 EUR |
| FCP360N65S3R0 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V TO220 PKG
MOSFETs SUPERFET3 650V TO220 PKG
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.22 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.08 EUR |
| FCP360N65S3R0 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
Description: MOSFET N-CH 650V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.33 EUR |
| 50+ | 3.19 EUR |
| 100+ | 2.88 EUR |
| FCP360N65S3R0 |
|
Hersteller: ONSEMI
Description: ONSEMI - FCP360N65S3R0 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
Description: ONSEMI - FCP360N65S3R0 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
auf Bestellung 5138 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.77 EUR |
| FCP360N65S3R0 |
|
Hersteller: ONN
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)