auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.17 EUR |
| 10+ | 2.59 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.92 EUR |
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Technische Details FCP360N65S3R0 onsemi
Description: MOSFET N-CH 650V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V.
Weitere Produktangebote FCP360N65S3R0 nach Preis ab 1.69 EUR bis 5.24 EUR
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FCP360N65S3R0 | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 10A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V |
auf Bestellung 5122 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP360N65S3R0 | Hersteller : ONSEMI |
Description: ONSEMI - FCP360N65S3R0 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 |
auf Bestellung 5138 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP360N65S3R0 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| FCP360N65S3R0 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 18nC |
Produkt ist nicht verfügbar |