auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.70 EUR |
| 10+ | 4.79 EUR |
| 50+ | 3.38 EUR |
| 100+ | 3.10 EUR |
| 500+ | 2.76 EUR |
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Technische Details FCP400N80Z onsemi / Fairchild
Description: MOSFET N-CH 800V 14A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 1000 V.
Weitere Produktangebote FCP400N80Z nach Preis ab 2.66 EUR bis 6.11 EUR
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FCP400N80Z | Hersteller : onsemi |
 Description: MOSFET N-CH 800V 14A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 1000 V |
auf Bestellung 840 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCP400N80Z | Hersteller : ONSEMI |
FCP400N80Z THT N channel transistors |
Produkt ist nicht verfügbar |