FCP650N80Z onsemi
Hersteller: onsemiDescription: MOSFET N-CH 800V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
auf Bestellung 1954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 168+ | 2.72 EUR |
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Technische Details FCP650N80Z onsemi
Description: MOSFET N-CH 800V 10A TO220, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V, Power Dissipation (Max): 162W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 800µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V.
Weitere Produktangebote FCP650N80Z nach Preis ab 3.54 EUR bis 4.75 EUR
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Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-220 Tube |
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FCP650N80Z | Hersteller : onsemi |
Description: MOSFET N-CH 800V 10A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 800µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V |
Produkt ist nicht verfügbar |