FCPF11N60F ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.4 EUR |
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Technische Details FCPF11N60F ON Semiconductor
Description: MOSFET N-CH 600V 11A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V.
Weitere Produktangebote FCPF11N60F nach Preis ab 3.61 EUR bis 10.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCPF11N60F | onsemi |
 Description: MOSFET N-CH 600V 11A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V |
auf Bestellung 928 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF11N60F | onsemi |
MOSFETs 600V NCH MOSFET |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF11N60F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 33A Power dissipation: 36W Technology: SJ-MOSFET |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCPF11N60F |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.15 EUR |
| 10+ | 6.09 EUR |
| 50+ | 4.77 EUR |
| 100+ | 4.34 EUR |
| 500+ | 3.61 EUR |
| FCPF11N60F |
|
Hersteller: onsemi
MOSFETs 600V NCH MOSFET
MOSFETs 600V NCH MOSFET
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.31 EUR |
| 10+ | 6.75 EUR |
| 100+ | 4.96 EUR |
| 500+ | 4.41 EUR |
| 1000+ | 3.92 EUR |
| FCPF11N60F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 33A
Power dissipation: 36W
Technology: SJ-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 52nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 33A
Power dissipation: 36W
Technology: SJ-MOSFET
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)