FCPF11N60F onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 988 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 8.61 EUR |
| 50+ | 6.81 EUR |
| 100+ | 5.84 EUR |
| 500+ | 5.19 EUR |
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Technische Details FCPF11N60F onsemi
Description: MOSFET N-CH 600V 11A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V.
Weitere Produktangebote FCPF11N60F nach Preis ab 4.21 EUR bis 8.66 EUR
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FCPF11N60F | Hersteller : onsemi / Fairchild |
MOSFET 600V NCH MOSFET |
auf Bestellung 879 Stücke: Lieferzeit 14-28 Tag (e) |
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FCPF11N60F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
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FCPF11N60F | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
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FCPF11N60F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FCPF11N60F | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 7A; Idm: 33A; 36W Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 33A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 52nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |