FCPF125N65S3 ON Semiconductor
| Anzahl | Preis |
|---|---|
| 500+ | 5.55 EUR |
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Technische Details FCPF125N65S3 ON Semiconductor
Description: MOSFET N-CH 650V 24A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.4mA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V.
Weitere Produktangebote FCPF125N65S3 nach Preis ab 3.53 EUR bis 9.13 EUR
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FCPF125N65S3 | onsemi |
 Description: MOSFET N-CH 650V 24A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
auf Bestellung 1404 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF125N65S3 | onsemi |
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG |
auf Bestellung 1372 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF125N65S3 | ON Semiconductor |
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auf Bestellung 8880 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCPF125N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
auf Bestellung 1404 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.03 EUR |
| 50+ | 4.77 EUR |
| 100+ | 4.36 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.53 EUR |
| FCPF125N65S3 |
|
Hersteller: onsemi
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
MOSFETs SuperFET3 650V 125 mOhm, TO220F PKG
auf Bestellung 1372 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 9.13 EUR |
| 10+ | 4.84 EUR |
| 100+ | 4.4 EUR |
| 1000+ | 4.08 EUR |
| FCPF125N65S3 |
|
Hersteller: ON Semiconductor
auf Bestellung 8880 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH