FCPF125N65S3 onsemi / Fairchild
auf Bestellung 1729 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.41 EUR |
| 10+ | 4.01 EUR |
| 100+ | 3.82 EUR |
| 500+ | 3.56 EUR |
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Technische Details FCPF125N65S3 onsemi / Fairchild
Description: MOSFET N-CH 650V 24A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2.4mA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V.
Weitere Produktangebote FCPF125N65S3 nach Preis ab 3.91 EUR bis 7.59 EUR
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FCPF125N65S3 | Hersteller : onsemi |
 Description: MOSFET N-CH 650V 24A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCPF125N65S3 | Hersteller : ON Semiconductor |
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auf Bestellung 8880 Stücke: Lieferzeit 21-28 Tag (e) |
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FCPF125N65S3 | Hersteller : ON Semiconductor |
N-Channel SuperFET III MOSFET |
Produkt ist nicht verfügbar |
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FCPF125N65S3 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| FCPF125N65S3 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 38W; TO220FP Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 44nC On-state resistance: 0.125Ω Gate-source voltage: ±30V Drain current: 24A Power dissipation: 38W Pulsed drain current: 60A Drain-source voltage: 650V Case: TO220FP |
Produkt ist nicht verfügbar |