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FCPF165N65S3L1

FCPF165N65S3L1 onsemi

fcpf165n65s3l1-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 650V 19A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.35 EUR
10+ 3.9 EUR
Mindestbestellmenge: 5
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Technische Details FCPF165N65S3L1 onsemi

Description: MOSFET N-CH 650V 19A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-220F-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V.

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FCPF165N65S3L1 FCPF165N65S3L1 Hersteller : ON Semiconductor / Fairchild FCPF165N65S3L1_D-1806164.pdf MOSFET SuperFET3 650V 165 mOhm, TO220F PKG
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Lieferzeit 10-14 Tag (e)
FCPF165N65S3L1 Hersteller : ON Semiconductor fcpf165n65s3l1-d.pdf N-Channel SuperFET® III MOSFET
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