
FCPF190N65FL1-F154 onsemi

Description: MOSFET N-CH 650V 20.6A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 100 V
auf Bestellung 23845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 8.48 EUR |
50+ | 4.38 EUR |
100+ | 4.16 EUR |
500+ | 3.46 EUR |
1000+ | 3.40 EUR |
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Technische Details FCPF190N65FL1-F154 onsemi
Description: MOSFET N-CH 650V 20.6A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 100 V.
Weitere Produktangebote FCPF190N65FL1-F154 nach Preis ab 3.64 EUR bis 6.72 EUR
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FCPF190N65FL1-F154 | Hersteller : onsemi |
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auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF190N65FL1-F154 | Hersteller : ON Semiconductor |
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