FCPF380N60E-F154 onsemi
Hersteller: onsemiDescription: MOSFET N-CH 600V 10.2A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tj)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.12 EUR |
| 10+ | 4.02 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.31 EUR |
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Technische Details FCPF380N60E-F154 onsemi
Description: MOSFET N-CH 600V 10.2A TO220F-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tj), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V.
Weitere Produktangebote FCPF380N60E-F154
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FCPF380N60E-F154 | Hersteller : ON Semiconductor |
Power MOSFET, N-Channel |
Produkt ist nicht verfügbar |
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| FCPF380N60E-F154 | Hersteller : onsemi |
MOSFETs Power MOSFET, N-Channel, SUPERFET II, Easy Drive, 600 V, 10.2 A, 380 mohm, TO-220F Ultra narrow lead |
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