Technische Details FD-DF80R12W1H3_B52 Infineon Technologies
Description: IGBT MOD 1200V 40A 215W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 215 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 235 nF @ 25 V.
Weitere Produktangebote FD-DF80R12W1H3_B52
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| FD-DF80R12W1H3_B52 | Hersteller : Infineon Technologies |
 Description: IGBT MOD 1200V 40A 215WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 215 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 235 nF @ 25 V |
Produkt ist nicht verfügbar |