Produkte > INFINEON TECHNOLOGIES > FD1000R33HE3KBOSA1

FD1000R33HE3KBOSA1 Infineon Technologies


Infineon-FD1000R33HE3_K-DataSheet-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d76007b9a7266
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 11500 W
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1000 A
Part Status: Active
IGBT Type: Trench Field Stop
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA
Operating Temperature: -40°C ~ 150°C
Configuration: Dual Brake Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details FD1000R33HE3KBOSA1 Infineon Technologies

Description: IGBT MODULE 3300V 1000A, Input Capacitance (Cies) @ Vce: 190 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 11500 W, Voltage - Collector Emitter Breakdown (Max): 3300 V, Current - Collector (Ic) (Max): 1000 A, Part Status: Active, IGBT Type: Trench Field Stop, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 1kA, Operating Temperature: -40°C ~ 150°C, Configuration: Dual Brake Chopper, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.