Weitere Produktangebote FDA28N50 nach Preis ab 4.51 EUR bis 14.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDA28N50 | ON Semiconductor |
 Trans MOSFET N-CH 500V 28A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA28N50 | onsemi |
MOSFETs UniFET 500V |
auf Bestellung 1443 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA28N50 | onsemi |
Description: MOSFET N-CH 500V 28A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
auf Bestellung 1587 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA28N50 | ONSEMI |
Description: ONSEMI - FDA28N50 - Leistungs-MOSFET, n-Kanal, 500 V, 28 A, 0.155 ohm, TO-3PN, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 500V rohsCompliant: Y-EX Dauer-Drainstrom Id: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 5V Verlustleistung: 310W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-3PN Anzahl der Pins: 3Pin(s) Produktpalette: UniFET productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.155ohm |
auf Bestellung 3277 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA28N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDA28N50 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 500V 28A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 500V 28A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 9.23 EUR |
| 120+ | 7.71 EUR |
| 270+ | 6.81 EUR |
| FDA28N50 |
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Hersteller: onsemi
MOSFETs UniFET 500V
MOSFETs UniFET 500V
auf Bestellung 1443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.83 EUR |
| 10+ | 5.59 EUR |
| 120+ | 5.11 EUR |
| FDA28N50 |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 1587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.02 EUR |
| 30+ | 6.27 EUR |
| 60+ | 5.71 EUR |
| 120+ | 5.24 EUR |
| 510+ | 4.51 EUR |
| FDA28N50 |
|
Hersteller: ONSEMI
Description: ONSEMI - FDA28N50 - Leistungs-MOSFET, n-Kanal, 500 V, 28 A, 0.155 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 310W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: UniFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.155ohm
Description: ONSEMI - FDA28N50 - Leistungs-MOSFET, n-Kanal, 500 V, 28 A, 0.155 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 500V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5V
Verlustleistung: 310W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: UniFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.155ohm
auf Bestellung 3277 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 14.09 EUR |
| 30+ | 7.82 EUR |
| 100+ | 6.24 EUR |
| 500+ | 6.1 EUR |
| 1000+ | 5.97 EUR |
| FDA28N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)