FDB0165N807L onsemi
Hersteller: onsemiDescription: MOSFET N-CH 80V 310A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 7.05 EUR |
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Technische Details FDB0165N807L onsemi
Description: MOSFET N-CH 80V 310A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V, Power Dissipation (Max): 3.8W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V.
Weitere Produktangebote FDB0165N807L nach Preis ab 7.22 EUR bis 13.62 EUR
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FDB0165N807L | Hersteller : onsemi / Fairchild |
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FDB0165N807L | Hersteller : onsemi |
Description: MOSFET N-CH 80V 310A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V |
auf Bestellung 2052 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0165N807L | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 80V 310A 7-Pin(6+Tab) D2PAK T/R |
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| FDB0165N807L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 310A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1780A Gate charge: 217nC Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| FDB0165N807L | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 310A; Idm: 1780A; 300W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 310A Power dissipation: 300W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1780A Gate charge: 217nC |
Produkt ist nicht verfügbar |