| Anzahl | Preis |
|---|---|
| 1+ | 8.57 EUR |
| 10+ | 6.64 EUR |
| 25+ | 6.09 EUR |
| 100+ | 5.1 EUR |
| 500+ | 5.02 EUR |
| 800+ | 4.52 EUR |
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Technische Details FDB024N06 onsemi / Fairchild
Description: MOSFET N-CH 60V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 395W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDB024N06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FDB024N06 | onsemi |
 Description: MOSFET N-CH 60V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
FDB024N06 | onsemi |
Description: MOSFET N-CH 60V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDB024N06 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB024N06 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH