FDB024N06

FDB024N06 ON Semiconductor


fdb024n06-d.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 67 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+3.66 EUR
Mindestbestellmenge: 41
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Technische Details FDB024N06 ON Semiconductor

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V.

Weitere Produktangebote FDB024N06 nach Preis ab 3.27 EUR bis 8.57 EUR

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FDB024N06 FDB024N06 Hersteller : ON Semiconductor fdb024n06-d.pdf Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+7.09 EUR
27+5.29 EUR
28+5.04 EUR
50+3.27 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
FDB024N06 FDB024N06 Hersteller : onsemi / Fairchild FDB024N06_D-2312021.pdf MOSFETs 60V N-Channel PowerTrench
auf Bestellung 1361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.57 EUR
10+6.64 EUR
25+6.09 EUR
100+5.10 EUR
500+5.02 EUR
800+4.52 EUR
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FDB024N06 FDB024N06 Hersteller : ON Semiconductor fdb024n06jp-d.pdf Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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FDB024N06 Hersteller : ON Semiconductor fdb024n06jp-d.pdf Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R
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FDB024N06 FDB024N06 Hersteller : ONSEMI fdb024n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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FDB024N06 FDB024N06 Hersteller : onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Produkt ist nicht verfügbar
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FDB024N06 FDB024N06 Hersteller : onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB024N06 FDB024N06 Hersteller : ONSEMI fdb024n06-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 190A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 226nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH