Technische Details FDB024N08BL7 ON Semiconductor
Description: MOSFET N-CH 80V 120A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 246W (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDB024N08BL7 nach Preis ab 3.81 EUR bis 11.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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FDB024N08BL7 | ON Semiconductor |
 Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB024N08BL7 | onsemi |
Description: MOSFET N-CH 80V 120A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
auf Bestellung 3900 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB024N08BL7 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB024N08BL7 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB024N08BL7 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R |
auf Bestellung 3144 Stücke: Lieferzeit 14-21 Tag (e) |
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FDB024N08BL7 | onsemi |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 3568 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB024N08BL7 | onsemi |
Description: MOSFET N-CH 80V 120A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 246W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
auf Bestellung 5116 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB024N08BL7 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.81 EUR |
| FDB024N08BL7 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
auf Bestellung 3900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.93 EUR |
| FDB024N08BL7 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 141+ | 4.65 EUR |
| 500+ | 4.36 EUR |
| FDB024N08BL7 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 141+ | 4.65 EUR |
| FDB024N08BL7 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
Trans MOSFET N-CH Si 80V 229A 7-Pin(6+Tab) D2PAK T/R
auf Bestellung 3144 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 141+ | 4.65 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 4 EUR |
| FDB024N08BL7 |
|
Hersteller: onsemi
MOSFETs 80V N-Channel PowerTrench MOSFET
MOSFETs 80V N-Channel PowerTrench MOSFET
auf Bestellung 3568 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.83 EUR |
| 10+ | 7.22 EUR |
| 100+ | 5.19 EUR |
| 500+ | 4.44 EUR |
| FDB024N08BL7 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 120A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 246W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.04 EUR |
| 10+ | 7.35 EUR |
| 100+ | 5.28 EUR |