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FDB120N10

FDB120N10 onsemi


fdb120n10-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 74A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V
auf Bestellung 428 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.82 EUR
100+2.80 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details FDB120N10 onsemi

Description: MOSFET N-CH 100V 74A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V.

Weitere Produktangebote FDB120N10 nach Preis ab 2.45 EUR bis 5.07 EUR

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FDB120N10 FDB120N10 Hersteller : onsemi / Fairchild fdb120n10-d.pdf MOSFETs 100V N-Chan 12Mohm PowerTrench
auf Bestellung 4047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.07 EUR
10+3.85 EUR
100+2.83 EUR
800+2.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDB120N10 FDB120N10 Hersteller : ON Semiconductor fdb120n10.pdf Trans MOSFET N-CH 100V 74A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
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FDB120N10 Hersteller : ONSEMI fdb120n10-d.pdf FDB120N10 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDB120N10 FDB120N10 Hersteller : onsemi fdb120n10-d.pdf Description: MOSFET N-CH 100V 74A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 74A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5605 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH